CMOS Image Sensor

ABSTRACT

A CMOS image sensor includes a photodiode, a plurality of transistors for transferring charges accumulated at the photodiode to one column line, and a voltage dropping element connected to a gate electrode of at least one transistor among the plurality of transistors for expanding a saturation region of the transistor by dropping down a gate voltage inputted to the gate electrode of the at least one transistor.

FIELD OF THE INVENTION

The present invention relates to a semiconductor technology; and, moreparticularly, to a complementary metal oxide semiconductor (CMOS) imagesensor.

DESCRIPTION OF RELATED ART

In recent years, a demand for a digital camera shows a tendency toexplosively increase with the development of visual communicationtechnology using an Internet. In addition, with an increasing supply ofa mobile communication terminals such as a personal digital assistant(PDA), an international mobile telecommunications-2000 (IMT-2000), acode division multiple access (CDMA) terminal or the like, in which acamera is mounted, a demand for a miniature camera module increasesaccordingly.

The camera module includes an image sensor basically. In general, theimage sensor is a device for converting an optical image into anelectrical signal. A charge coupled device (CCD) image sensor and acomplementary metal oxide semiconductor (CMOS) image sensor are widelyused.

The CCD image sensor, however, has several disadvantages: powerconsumption is too high; a manufacturing process is too complicatedbecause of a plurality of masking processes; and the CCD image sensor ishardly manufactured in one chip because it is difficult to embody asignal processing circuit within the chip. On the contrary, since theCMOS image sensor can be manufactured such that control, drive andsignal processing circuits are integrated into a monolithic integratedcircuit within a single chip, it is looming large recently. Besides, invirtue of low voltage performance, low power consumption, compatibilitywith peripheral devices, usefulness of a standard CMOS manufacturingprocess, the CMOS image sensor requires relatively low manufacturingcost in comparison with the CCD image sensor.

However, in the CMOS image sensor, an analog signal generated by alight-receiving element such as a photodiode or the like, has variousparasitic effects caused by parasitic capacitance, resistance, darkcurrent leakage, inconformity of semiconductor device characteristic,etc. These parasitic effects, which inevitably occur in thesemiconductor device, cause a signal to noise ratio of image data to bedegraded. Therefore, the noise acts as an important factor thatrestricts the performance of the CMOS image sensor.

As causes for noise in the CMOS image sensor, for example, there arekt/C noise with regard to image data sampling, I/f noise with regard toa circuit used for amplifying an image signal, and fixed pattern noise(FPN) with regard to inconformity of the signal processing circuit inthe image sensor. Among these, since the FPN is easily detected by auser's eyes as it is represented as longitudinal lines or stripes, itlooks terribly bad to the user's eyes.

FIG. 1 is a schematic view of a conventional CMOS image sensor having asquare shaped unit pixel.

Referring to FIG. 1, a row decoder 20 for decoding a row address isdisposed at one side of a pixel array 10, and a column decoder 30 fordecoding a column address is disposed at another side. Herein, thecolumn decoder 30 connected to outputs of pixel data is arranged in apredetermined direction perpendicular to the row decoder 20.

A procedure of reading data from the conventional CMOS image sensorhaving the above configuration will be set forth more fully below.

To begin with, when the row decoder 20 selects a first row, and thecolumn decoder 30 then selects a first column, data of a correspondingselected pixel is read out and thereafter the data of the correspondingselected pixel is amplified. Afterwards, when the row decoder 20 selectsa second row, and the column decoder 30 then selects a second column,data of a corresponding selected pixel is read out and thereafter thedata of the corresponding selected pixel is amplified. In this manner,data for all pixels are read out.

There are various kinds of unit pixels used in the CMOS image sensor, ofwhich one is a 3-transistor (3-T) structure configured with threetransistors and one photodiode, another one is a 4-transistor (4-T)structure configured with four transistors and one photodiode.

FIG. 2 is a circuit diagram setting forth a typical 3-T structure amongthe various kinds of unit pixels for the conventional CMOS image sensor.

Referring to FIG. 2, a 3-T structured pixel includes one photodiode PDfor converting photons into electrons and 5 storing them, and three NMOStransistors. Herein, the three NMOS transistors are configured with areset transistor Rx for resetting one end of the photodiode PD to apower voltage level VDD, a drive transistor Dx acting as a bufferamplifier configured as a source follower which is operated according tothe charges accumulated at the photodiode PD, and a select transistor Sxfor performing a switching operation for addressing.

FIG. 4 is a circuit diagram setting forth a typical 4-T structure amongthe various kinds of unit pixels for the conventional CMOS image sensor.

Referring to FIG. 4, a 4-T structured pixel includes one photodiode PDand four NMOS transistors. Herein, the four NMOS transistors areconfigured with a transfer transistor Tx for transferringphoto-generated charges accumulated at the photodiode PD to a floatingdiffusion region FD, a reset transistor Rx for setting the floatingdiffusion region FD to a desired potential level and resetting thefloating diffusion region FD by discharging the charges, and a drivetransistor Dx acting as a buffer amplifier configured as a sourcefollower which is operated according to the charges stored at thefloating diffusion region FD, and a select transistor Sx for performinga switching operation for addressing.

As it is understood from FIGS. 2 and 4, a significant difference betweenthe 3-T and 4-T structured pixels is whether or not the transfertransistor Tx and the floating diffusion region FD exist. The 3-Tstructured pixel detects a reset level by turning on the resettransistor Rx after detecting a signal level in advance, whereas the 4-Tstructured pixel detects a signal level by turning on the transfertransistor Tx after detecting a reset level by turning on the resettransistor Rx in advance.

Meanwhile, FIG. 3 is a circuit diagram of a pixel array in which the 3-Tstructured pixels of FIG. 2 commonly share one column line. Referring toFIG. 3, respective unit pixels UPI-UPn are commonly connected to onecolumn line so as to be connected to one load transistor Load.

FIG. 5 is a circuit diagram of a pixel array in which the 4-T structuredpixels of FIG. 4 commonly share one column line. Referring to FIG. 5,respective unit pixels UPI-UPn are commonly connected to one column lineso as to be connected to one load transistor Load.

As shown in FIGS. 3 and 5, a plurality of 3-T or 4-T structured unitpixels are configured such that the plurality of pixels commonly shareone column line and they are connected to one load transistor Loadthrough the column line. Here, a signal is read out and outputted forevery column line, 2 as illustrated in FIG. 1.

Since pixel data outputted from the plurality of pixels are read throughone column line, a fixed noise pattern (FPN) occurs due to an offsetdifference generated in every pixel during the manufacturing process.One of causes for the FPN is a variation of a channel length caused by avariation of a final inspection critical dimension (FICD) of a gateelectrode of an adjacent transistor, and a consequent variation ofsaturation current.

Currently, the characteristics of a transistor to which 0.18 μm CMOSimage sensor technology is applied is shown below.

TABLE 1 Idsat Idsat′ Kind of Transistor W/L (μm) (μA) (μA/μm) Load Tr.2/2 256 128 2/4 139 70 4/2 506 124 Dx & Sx Tr. 0.25/0.35 150 600

Referring to FIGS. 6A and 6B, and the table 1, the conventional unitpixel is designed such that gate electrode lengths L of the drive andselect transistors Dx and Sx are equal to each other. Accordingly, adriving current is about 150 μA at the drive and select transistors Dxand Sx, and about 260 μA at the load transistor Load.

In general, the driving current in driving the CMOS image sensor isdetermined as a value corresponding to the driving current of the driveor select transistor Dx or Sx, which has a minimum driving current.Therefore, the manufacturing process of the drive or select transistorsSx or Dx should be precisely controlled.

However, there occurs a problem that the FICD of the gate electrode ischanged during etching process for defining the gate electrodes of thedrive and select transistors Dx and Sx. This change of the FICD of thegate electrode varies the driving current, which leads to a column fixedpattern noise.

SUMMARY OF THE INVENTION

It is, therefore, an object of the present invention to provide an imagesensor capable of solving a limitation in that a column fixed noisepattern is caused by a change of a final inspection critical dimension(FICD) of a gate electrode in a transistor constituting a unit pixel.

In accordance with an aspect of the present invention, there is provideda CMOS image sensor including a photodiode and a plurality oftransistors switching a charge accumulated at the photodiode andtransferring the charge to one column line, wherein at least onetransistor among the plurality of transistors comprises a gate electrodehaving a voltage drop unit for dropping a gate voltage input to the gateelectrode to expand a saturation region of the transistor.

In accordance with another aspect of the present invention, there isprovided a CMOS image sensor including, a photodiode, a first transistorfor resetting the photodiode, a second transistor for amplifying andoutputting a charge accumulated at the photodiode, a third transistorfor transferring a signal output from the second transistor to a columnline, and a voltage dropping element connected to a gate electrode of afirst or third transistor for expanding a saturation region of the firstor third transistor by dropping down a gate voltage inputted to the gateelectrode of the first or third transistor.

In accordance with further another aspect of the present invention,there is provided a CMOS image sensor including a photodiode, a firsttransistor for resetting the photodiode, a second transistor fortransferring a charge accumulated at the photodiode to a floatingdiffusion region, a third transistor for amplifying and outputting acharge accumulated at the floating diffusion region, a fourth transistorfor transferring a signal output from the third transistor to one columnline, and a voltage dropping element connected to a gate electrode of afirst, second or fourth transistor for expanding a saturation region ofthe first, second or fourth transistor by dropping down a gate voltageinputted to the gate electrode of the first, second or fourthtransistor.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects and features of the present invention willbecome better understood with respect to the following description ofthe preferred embodiments given in conjunction with the accompanyingdrawings, in which:

FIG. 1 is a schematic view of a conventional complementary metal oxidesemiconductor (CMOS) image sensor having a square shaped unit pixel;

FIG. 2 is a circuit diagram setting forth a typical 3-T structure amongthe various kinds of unit pixels for the conventional CMOS image sensor;

FIG. 3 is a circuit diagram of a pixel array in which the 3-T structuredpixels of

FIG. 2 commonly share one column line;

FIG. 4 is a circuit diagram setting forth a typical 4-T structure amongthe various kinds of unit pixels for the conventional CMOS image sensor;

FIG. 5 is a circuit diagram of a pixel array in which the 14-Tstructured pixels of FIG. 4 commonly share one column line;

FIGS. 6A and 6B are a circuit diagram and a plane view, respectively,illustrating a drive transistor and a select transistor of a unit pixel;

FIG. 7 is a graph illustrating a technical principle of the presentinvention;

FIGS. 8A and 8B, and FIGS. 9A and 9B are circuit diagrams illustrating aunit pixel of a CMOS image sensor in accordance with a first embodimentof the present invention;

FIGS. 10A and 10B, and FIGS. 11A and 11B are circuit diagramsillustrating a unit pixel of a CMOS image sensor in accordance with asecond embodiment of the present invention;

FIGS. 12A and 12B, and FIGS. 13A and 13B are circuit diagramsillustrating a unit pixel of a CMOS image sensor in accordance with athird embodiment of the present invention;

FIG. 14 is a plane view illustrating the unit pixel of the CMOS imagesensor shown in FIG. 12;

FIG. 15A is a sectional view taken along line I-I′ of FIG. 14; and

FIG. 15B is an equivalent circuit diagram of FIG. 15A.

DETAILED DESCRIPTION OF THE INVENTION

A complementary metal oxide semiconductor (CMOS) image sensor inaccordance with exemplary embodiments of the present invention will bedescribed in detail with reference to the accompanying drawings. Thepresent invention may, however, be embodied in different forms andshould not be construed as limited to the embodiments set forth herein.Rather, these embodiments are provided so that this disclosure will bethorough and complete, and will fully convey the scope of the presentinvention to those skilled in the art. Like reference numerals in thedrawings denote like elements.

In the present invention, a gate voltage of transistors constituting aunit pixel is reduced by means of the change of a mask without anadditional process, and thus a saturation region of the transistor canbe expanded. Accordingly, it is possible to eliminate column fixedpattern noise by controlling the transistor to operate within thesaturation region. That is, as shown in FIG. 7, the saturation region Amay be expanded by ΔA as the gate voltage Vg of the transistor isreduced by ΔVg.

First Embodiment

FIGS. 8A and 8B, and FIGS. 9A and 9B are circuit diagrams illustrating aunit pixel of a CMOS image sensor in accordance with a first embodimentof the present invention. Herein, FIGS. 8A and 8B are circuit diagramsillustrating a 4-T structured unit pixel having four transistors, andFIGS. 9A and 9B are circuit diagrams illustrating a 3-T structured unitpixel having three transistors.

FIG. 8A is a circuit diagram illustrating a structure where a selecttransistor Sx is connected between an output terminal Vout and a sourceof a drive transistor Dx, and FIG. 8B is a circuit diagram illustratinga structure where a select transistor Sx is connected between a floatingdiffusion region FD and a gate of a drive transistor Dx. In addition,FIG. 9A is a circuit diagram illustrating a structure where a selecttransistor Sx is connected between a reset transistor Rx and a gate of adrive transistor Dx, and FIG. 9B is a circuit diagram illustrating astructure where a select transistor Sx is connected between the drivetransistor Dx and a load transistor Load.

Referring to FIGS. 8A and 8B, and FIGS. 9A and 9B, in the unit pixel ofthe CMOS image sensor in accordance with the first embodiment of thepresent invention, a second power voltage VDD2 is used as a gate voltagefor the select transistor Sx, wherein the second power voltage VDD2 hasa lower voltage level than a first power voltage VDD1. To this end,there is additionally employed a switching device 10 between the gate ofthe select transistor Sx and the second power voltage VDD2. Herein, thefirst power voltage VDD1 is set to approximately 2.5V, and the secondpower voltage VDD2 is set to approximately 1.8 V.

Although the switching device 10 may configured as an NMOS or a PMOStransistor, it is preferable that the switching device 10 is configuredas the NMOS transistor NM in consideration of a fabrication process andan application of gate bias (2.5V), because all the transistorsconstituting the unit pixel are configured as the NMOS transistor.Further, it is preferable that the NMOS transistor NM is configured as anative transistor of which a threshold voltage is nearly zero such thatthat the NMOS transistor may operate only as a switching device withoutany voltage drop.

Second Embodiment

FIGS. 10A and 10B, and FIGS. 11A and 11B are circuit diagramsillustrating a unit pixel of a CMOS image sensor in accordance with asecond embodiment of the present invention. Herein, FIGS. 10A and 10Bare circuit diagrams illustrating a 4-T structured unit pixel, and FIGS.11A and 11B are circuit diagrams illustrating a 3-T structured unitpixel.

Referring to FIGS. 10A and 10B, and FIGS. 11A and 11B, a unit pixel of aCMOS image sensor in accordance with the second embodiment of thepresent invention includes a resistor R connected to a gate of a selecttransistor Sx to drop down a gate voltage of the select transistor Sx.Therefore, the gate voltage is dropped down by a predeterminedresistance of the resistor R and the dropped voltage is then applied tothe gate of the select transistor Sx.

The resistor R is not formed by additional process but formed by selfaligned suicide (SALICIDE) process, in accordance with the secondembodiment of the present invention. Therefore the fabrication processfor the CMOS image sensor can be simplified and there is not required anadditional area. The SALICIDE process will be illustrated more fullylater.

Third Embodiment

FIGS. 12A and 12B, and FIGS. 13A and 13B are circuit diagramsillustrating a unit pixel of a CMOS image sensor in accordance with athird embodiment of the present invention. Herein, FIGS. 12A and 12B arecircuit diagrams illustrating a 4-T structured unit pixel, and FIGS. 13Aand 13B are circuit diagrams illustrating a 3-T structured unit pixel.

Referring to FIGS. 12A and 12B, and FIGS. 13A and 13B, a unit pixel of aCMOS image sensor in accordance with the third embodiment of the presentinvention includes resistors R connected to respective gates of atransfer transistor Tx(not shown in the 3-T structured unit pixel) and areset transistor Rx as well as a gate of a select transistor Sx.Therefore, the gate voltages are dropped down by resistances of theresistors R and the reduced voltages are then applied to the respectivegates of the transistors Tx, Rx and Sx.

The SALICIDE process for embodying the resistor will be illustrated withreference to FIG. 14 and FIGS. 15A and 15B.

FIG. 14 is a plane view of a 4-T structured unit pixel illustrating theself align silicide process, and FIG. 15A is a sectional view takenalong line I-I′ of FIG. 14 and FIG. 15B is an equivalent circuit diagramof FIG. 15A.

As shown in FIGS. 14 and 15A, a silicide layer 24 is formed only onportions of gate electrodes 23 of the transfer transistor Tx, the resettransistor Rx, and the select transistor Sx, respectively. That is, thegate electrode 23 has a stacked structure of a gate insulation layer 21and a polysilicon layer 22, and the silicide layer 24 is only partiallyformed on the polysilicon layer 22, which is represented as a hatchedline.

In the above exemplary structure, the resistance of the portion wherethe silicide layer 24 is formed is different from that of the portionwhere the silicide layer 24 is not formed. That is, the portion wherethe silicide layer 24 is formed has a lower resistance than the portionwhere the silicide layer 24 is not formed. As a result, it is possibleto obtain an equivalent circuit depicted in FIG. 15B.

As described above with the help of exemplary embodiments of the presentinvention, a predetermined voltage dropping element is disposed to thegate of transistor(s) in the unit pixel for dropping down the gatevoltage so that a saturation region of each transistor is expanded tothereby remove a column fixed noise pattern.

In addition, in accordance with the present invention, the resistor isused as the voltage dropping element and the resistor can be embodied bychanging masks through the SALICIDE process without any additionalprocess so that it is possible to improve product yield.

The present application is a divisional of U.S. patent application Ser.No. 14/246,827, filed on Apr. 7, 2014, which is a continuation of U.S.patent application Ser. No. 13/236,722, filed on Sep. 20, 2011, andissued as U.S. Pat. No. 8,710,562 on Apr. 29, 2014, which is acontinuation of U.S. patent application Ser. No. 11/645,515, filed onDec. 27, 2006, and issued as U.S. Pat. No. 8,063,423, on Nov. 22, 2011,the entirety of these applications being herein incorporated byreference. The present application claims priority to Korean patentapplication No. KR 2005-0130489, filed in the Korean Patent Office onDec. 27, 2005, the entire contents of which are incorporated herein byreference.

While the present invention has been described with respect to certainpreferred embodiments, it will be apparent to those skilled in the artthat various changes and modifications may be made without departingfrom the spirit and scope of the invention as defined in the followingclaims

1-9. (canceled)
 10. A method for forming an apparatus, wherein themethod comprises: forming a first gate electrode by: forming a firstgate insulation layer; and forming a first polysilicon layer on thefirst gate insulation layer; and forming a first silicide layer on onlya portion of the first polysilicon layer.
 11. The method of claim 10,wherein said forming a first silicide layer comprises a self-alignedsilicide process.
 12. The method of claim 10, wherein the first gateelectrode is formed as a part of one of a select transistor, a transfertransistor, or a reset transistor.
 13. The method of claim 10, whereinthe first gate electrode is formed as a part of a select transistor. 14.The method of claim 10, further comprising: forming a second gateelectrode by: forming a second gate insulation layer; and forming asecond polysilicon layer on the second gate insulation layer; andforming a second silicide layer on only a portion of the secondpolysilicon layer.
 15. The method of claim 14, wherein said forming asecond silicide layer comprises a self-aligned silicide process.
 16. Theapparatus of claim 14, wherein: the first gate electrode is formed as apart of one of a select transistor, a transfer transistor, or a resettransistor; and the second gate electrode is formed as a part of adifferent one of the select transistor, the transfer transistor, or thereset transistor.
 17. The method of claim 16, wherein the first gateelectrode is formed as a part of the select transistor.
 18. The methodof claim 14, further comprising: forming a third gate electrode by:forming a third gate insulation layer; and forming a third polysiliconlayer on the third gate insulation layer; and forming a third silicidelayer on only a portion of the third polysilicon layer.
 19. The methodof claim 18, wherein said forming a third silicide layer comprises aself-aligned silicide process.
 20. The method of claim 18, wherein: thefirst gate electrode is formed as a part of one of a select transistor,a transfer transistor, or a reset transistor; the second gate electrodeis formed as a part of a different one of the select transistor, thetransfer transistor, or the reset transistor; and the third gateelectrode is formed as a part of the remaining one of the selecttransistor, the transfer transistor, or the reset transistor.